| No. |
Part Name |
Description |
Manufacturer |
| 6781 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 6782 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 6783 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 6784 |
BF166 |
Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier |
SGS-ATES |
| 6785 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 6786 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 6787 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 6788 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 6789 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 6790 |
BF509 |
Epitaxial planar PNP transistor, intended for use as controlled VHF preamplifier |
SGS-ATES |
| 6791 |
BF509S |
Epitaxial planar PNP transistor, intended for use as controlled VHF AGC preamplifier |
SGS-ATES |
| 6792 |
BF961 |
Dual gate, discharge mode, MOS field controlled tetrode |
Mikroelektronikai Vallalat |
| 6793 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 6794 |
BG 3230 |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
| 6795 |
BG 3230R |
Two n-Channnel Automatic Gain Controlled RF-MOSFET in one Package |
Infineon |
| 6796 |
BGU7063 |
Analog controlled high linearity low noise variable gain amplifier |
NXP Semiconductors |
| 6797 |
BH3857 |
Audio sound controller |
ROHM |
| 6798 |
BH6552FV |
Voltage controller for CD-ROM |
ROHM |
| 6799 |
BH9610K |
Laser Power Controller |
ROHM |
| 6800 |
BI3101A-DP |
Dual PWM CCFL controller |
Beyond Innovation Technology Co |
| 6801 |
BI3101A-SO |
Dual PWM CCFL controller |
Beyond Innovation Technology Co |
| 6802 |
BI3102 |
LOW COST PWM CCFL CONTROLLER |
etc |
| 6803 |
BIC702C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 6804 |
BIC702M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 6805 |
BIC703C |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 6806 |
BIC703M |
Bias Controlled Monolithic IC UHF RF Amplifier |
Hitachi Semiconductor |
| 6807 |
BIT3105 |
High Efficiency ZVS CCFL Controller |
etc |
| 6808 |
BIT3106 |
High Efficiency Dual ZVS CCFL Controller |
etc |
| 6809 |
BM1R00001F |
High Efficiency and Low Standby Power, CCM corresponding Secondary Side Synchronous Rectification Controller IC |
ROHM |
| 6810 |
BM1R00001F-E2 |
High Efficiency and Low Standby Power, CCM corresponding Secondary Side Synchronous Rectification Controller IC |
ROHM |
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