No. |
Part Name |
Description |
Manufacturer |
6811 |
2N6392 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
6812 |
2N6393 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
6813 |
2N6410 |
Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
6814 |
2N6411 |
Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
6815 |
2N6412 |
Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
6816 |
2N6413 |
Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
6817 |
2N6414 |
Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
6818 |
2N6415 |
Trans GP BJT NPN 100V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
6819 |
2N6426 |
NPN Darlington Transistor |
Fairchild Semiconductor |
6820 |
2N6426-D |
Darlington Transistors NPN Silicon |
ON Semiconductor |
6821 |
2N6426_D26Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
6822 |
2N6426_D74Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
6823 |
2N6427 |
NPN Darlington Transistor |
Fairchild Semiconductor |
6824 |
2N6427 |
NPN Darlington transistor |
Philips |
6825 |
2N6427 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
Samsung Electronic |
6826 |
2N6427_D26Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
6827 |
2N6427_D27Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
6828 |
2N6427_D75Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
6829 |
2N6428 |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 Sleeve |
New Jersey Semiconductor |
6830 |
2N6428 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
6831 |
2N6428A |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
6832 |
2N6428A |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
6833 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
6834 |
2N6430 |
Trans GP BJT NPN 200V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
6835 |
2N6431 |
Trans GP BJT NPN 300V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
6836 |
2N6439 |
60 W,NPN silicon RF power transistor |
MA-Com |
6837 |
2N6439 |
Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz |
Motorola |
6838 |
2N6439 |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Motorola |
6839 |
2N6439 |
Trans GP BJT NPN 33V 4-Pin Case 316-01 |
New Jersey Semiconductor |
6840 |
2N646 |
Germanium NPN Transistor |
Motorola |
| | | |