No. |
Part Name |
Description |
Manufacturer |
6841 |
TC554001FTL-70V |
524, 288 words x 8 bit static RAM, access time 70ns |
TOSHIBA |
6842 |
TC554001FTL-85 |
524,288 WORDS x 8BIT STATIC RAM |
TOSHIBA |
6843 |
TC554001FTL-85V |
524, 288 words x 8 bit static RAM, access time 85ns |
TOSHIBA |
6844 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6845 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6846 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6847 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6848 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6849 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6850 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
6851 |
TC5564AFL-15 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
6852 |
TC5564AFL-20 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
6853 |
TC5564APL-15 |
-0.3 to 7V; 1W; 150ns; 8.192 word x 8bit MOS static RAM |
TOSHIBA |
6854 |
TC5564APL-20 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
6855 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6856 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6857 |
TC5565AFL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6858 |
TC5565AFL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6859 |
TC5565APL |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6860 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6861 |
TC5565APL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6862 |
TC5565APL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
6863 |
TC55V1001F |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
6864 |
TC55V1001F-10 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
6865 |
TC55V1001F-10L |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
6866 |
TC55V1001F-85 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
6867 |
TC55V1001F-85L |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
6868 |
TC55V1001FI |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
6869 |
TC55V1001FI-10 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
6870 |
TC55V1001FI-85 |
131,072 WORD BY 8 BIT STATIC RAM |
TOSHIBA |
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