| No. |
Part Name |
Description |
Manufacturer |
| 6841 |
OC604 |
Germanium PNP junction low-frequency transistor |
TELEFUNKEN |
| 6842 |
OC604 DOT BLUE |
Germanium PNP junction low-frequency transistor |
TELEFUNKEN |
| 6843 |
OC604 DOT GREEN |
Germanium PNP junction low-frequency transistor |
TELEFUNKEN |
| 6844 |
OC604 DOT VIOLET |
Germanium PNP junction low-frequency transistor |
TELEFUNKEN |
| 6845 |
OC604 DOT WHITE |
Germanium PNP junction low-frequency transistor |
TELEFUNKEN |
| 6846 |
OC604 spez. |
Germanium PNP junction transistor, red point |
TELEFUNKEN |
| 6847 |
OC612 |
Germanium PNP junction HF transistor |
TELEFUNKEN |
| 6848 |
OC613 |
Germanium PNP junction HF transistor |
TELEFUNKEN |
| 6849 |
OC614 |
Germanium PNP junction transistor, RF and IF stages |
TELEFUNKEN |
| 6850 |
OC615 |
Germanium PNP junction transistor, USW stages |
TELEFUNKEN |
| 6851 |
OD603 |
Germanium PNP junction transistor, power output stages |
TELEFUNKEN |
| 6852 |
OD603/50 |
Germanium PNP junction transistor, power transistor with high blocking voltage |
TELEFUNKEN |
| 6853 |
OP900SL |
PN junction silicon photodiode |
Optek Technology |
| 6854 |
OS14 |
Germanium PNP alloy junction photo transistor |
TOSHIBA |
| 6855 |
OS18 |
Silicon NPN diffused junction photo transistor |
TOSHIBA |
| 6856 |
P1086 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 6857 |
P1087 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 6858 |
P4KE |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
| 6859 |
P4KE |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 6860 |
P4KE10 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
| 6861 |
P4KE10 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 6862 |
P4KE100 |
81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6863 |
P4KE100 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
| 6864 |
P4KE100 |
100 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 6865 |
P4KE100 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 6866 |
P4KE100A |
85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 6867 |
P4KE100A |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
| 6868 |
P4KE100A |
100 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 6869 |
P4KE100A |
100 V, 1 mA, glass passivated junction transient voltage suppressor |
TRSYS |
| 6870 |
P4KE100C |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
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