| No. |
Part Name |
Description |
Manufacturer |
| 691 |
3N125 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
| 692 |
3N126 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
| 693 |
3N128 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
| 694 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 695 |
3N138 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
| 696 |
3N139 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 697 |
3N139 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
| 698 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
| 699 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 700 |
3N140 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
| 701 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 702 |
3N141 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
| 703 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 704 |
3N142 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
| 705 |
3N143 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
| 706 |
3N152 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
| 707 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 708 |
3N153 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
| 709 |
3N153 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 710 |
3N154 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
| 711 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 712 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 713 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 714 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 715 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 716 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 717 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 718 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 719 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 720 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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