| No. |
Part Name |
Description |
Manufacturer |
| 691 |
BFS460L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 692 |
BFS466L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 693 |
BFS469L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 694 |
BFW92A |
Silicon planar epitaxial NPN transistor intended for use in amplifiers in the 40-860MHz range |
Philips |
| 695 |
BLF146 |
RF Power MOSFET intended for use in professional transmitters in the HF range |
Philips |
| 696 |
BLU50 |
VHF/UHF PUSH-PULL Power NPN Transistor for use in military and professional wideband applications in the 30 to 400MHz range |
Philips |
| 697 |
BLV80/28 |
VHF Power NPN silicon planar epitaxial transistor intended for use in base stations in the VHF mobile radio band |
Philips |
| 698 |
BLV90SL |
UHF Power NPN Transistor designed for use in mobile radio transmitters in the 900 MHz band |
Philips |
| 699 |
BQ24901 |
Single-cell Li-Ion/Li-Pol Charger for Offline Applications (Primary-side Control) in TSSOP-14 |
Texas Instruments |
| 700 |
BQ24901PW |
Single-cell Li-Ion/Li-Pol Charger for Offline Applications (Primary-side Control) in TSSOP-14 |
Texas Instruments |
| 701 |
BQ24901PWG4 |
1-cell Li-Ion Charger for Offline Applications (Primary-side Control) in TSSOP-14 14-TSSOP -20 to 85 |
Texas Instruments |
| 702 |
BQ24901PWR |
Single-cell Li-Ion/Li-Pol Charger for Offline Applications (Primary-side Control) in TSSOP-14 |
Texas Instruments |
| 703 |
BQ24901PWRG4 |
Single-cell Li-Ion/Li-Pol Charger for Offline Applications (Primary-side Control) in TSSOP-14 |
Texas Instruments |
| 704 |
BU126 |
Silicon NPN triple diffused MESA high voltage power transistor intended for use in the switched mode power supply of television receivers |
TOSHIBA |
| 705 |
BU208A |
NPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W. |
USHA India LTD |
| 706 |
BU406 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 707 |
BU406H |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 708 |
BU408 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 709 |
BXY22G |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 710 |
BXY22H |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 711 |
BXY22J |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 712 |
BXY23 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 713 |
BXY28 |
Silicon planar epitaxial varactor diode for use in high C efficiency multipliers in the 2-4 GHz range |
Mullard |
| 714 |
BXY29 |
Silicon planar epitaxial varactor diode for use in frequency multiplier circuits in the 4-8GHz range |
Mullard |
| 715 |
BXY43A |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 716 |
BXY43B |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 717 |
BXY43B |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 718 |
BXY43C |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 719 |
BXY43C |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 720 |
BXY44E |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| | | |
