| No. |
Part Name |
Description |
Manufacturer |
| 691 |
2SC9014 |
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE |
USHA India LTD |
| 692 |
2SJ108 |
Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 693 |
2SJ74 |
Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 694 |
2SK117 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 695 |
2SK170 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 696 |
2SK184 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
| 697 |
2SK187 |
SILICON N-CHANNEL JUNCTION FET LOW FREQUECY LOW NOISE AMPLIFIER |
Hitachi Semiconductor |
| 698 |
2SK209 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 699 |
2SK2145 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 700 |
2SK222 |
N-Channel Junction Silicon FET Low-Frequency, Low Noise Amplifier Applications |
SANYO |
| 701 |
2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 702 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 703 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 704 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 705 |
2SK3001 |
GaAs HEMT Low Noise Amplifier |
Hitachi Semiconductor |
| 706 |
2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
| 707 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 708 |
2SK3320 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 709 |
2SK369 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 710 |
2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 711 |
2SK371 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
| 712 |
2SK58 |
Silicon N-Channel Junction Type Dual FET (DC-to-VHF Use, Low Noise) |
SONY |
| 713 |
2SK676H5 |
AlGaAs/GaAs Low Noise Microwave HEMT CHIP |
SONY |
| 714 |
2SK677H5 |
AlGaAs/GaAs Low Noise Microwave HEMT CHIP |
SONY |
| 715 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 716 |
5962-0254401QZA |
Single/ Dual Ultra Low Noise Wideband Operational Amplifier |
National Semiconductor |
| 717 |
5962-0254401QZA |
Single/ Dual Ultra Low Noise Wideband Operational Amplifier |
National Semiconductor |
| 718 |
5962-0254501MPA |
Dual Wideband, Low Noise, Voltage Feedback Op Amp |
National Semiconductor |
| 719 |
5962-0254501MPA |
Dual Wideband, Low Noise, Voltage Feedback Op Amp |
National Semiconductor |
| 720 |
5962-0254501MZA |
Dual Wideband, Low Noise, Voltage Feedback Op Amp |
National Semiconductor |
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