| No. |
Part Name |
Description |
Manufacturer |
| 691 |
BC857CMB |
45 V, 100 mA PNP general-purpose transistors |
NXP Semiconductors |
| 692 |
BC857CQA |
45 V, 100 mA PNP general-purpose transistors |
Nexperia |
| 693 |
BC857QAS |
45 V, 100 mA PNP/PNP general-purpose transistor |
Nexperia |
| 694 |
BC857RA |
45 V, 100 mA PNP/PNP general-purpose double transistors |
Nexperia |
| 695 |
BCM847QAS |
45 V, 100 mA NPN/NPN matched double transistors |
Nexperia |
| 696 |
BCM857QAS |
45 V, 100 mA PNP/PNP matched double transistors |
Nexperia |
| 697 |
BD135-16 |
12.500W Switching NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD136-16 |
Continental Device India Limited |
| 698 |
BD136-16 |
12.500W Switching PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD135-16 |
Continental Device India Limited |
| 699 |
BD137-16 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD138-16 |
Continental Device India Limited |
| 700 |
BD138-16 |
12.500W Switching PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD137-16 |
Continental Device India Limited |
| 701 |
BD139-16 |
12.500W Switching NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD140-16 |
Continental Device India Limited |
| 702 |
BD140-16 |
12.500W Switching PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD139-16 |
Continental Device India Limited |
| 703 |
BD175-16 |
30.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 250 hFE. |
Continental Device India Limited |
| 704 |
BD176-16 |
30.000W Switching PNP Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 250 hFE. |
Continental Device India Limited |
| 705 |
BD529-1 |
NPN silicon annular amplifier transistor. 10 W, 100 V. |
Motorola |
| 706 |
BD529-5 |
NPN silicon annular amplifier transistor. 10 W, 100 V. |
Motorola |
| 707 |
BD530-1 |
PNP silicon annular amplifier transistor. 10 W, 100 V. |
Motorola |
| 708 |
BD530-5 |
PNP silicon annular amplifier transistor. 10 W, 100 V. |
Motorola |
| 709 |
BF494B |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 100 - 220 hFE |
Continental Device India Limited |
| 710 |
BR810DL |
2.0A, 1000V ultra fast recovery rectifier |
MCC |
| 711 |
BS62LV2001DC-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
| 712 |
BS62LV2001DI-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
| 713 |
BS62LV2001SC-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
| 714 |
BS62LV2001SI-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
| 715 |
BS62LV2001STC-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
| 716 |
BS62LV2001STI-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
| 717 |
BS62LV2001TC-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
| 718 |
BS62LV2001TI-10 |
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns |
Brilliance Semiconductor |
| 719 |
BSP123 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=6 Ohm, 0.37A, LL |
Infineon |
| 720 |
BSP296 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0.8 Ohm, 1.0A, LL |
Infineon |
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