| No. |
Part Name |
Description |
Manufacturer |
| 691 |
STBB2J29-R |
800 mA 2.5 MHz, high efficiency dual mode buck-boost DC-DC converter |
ST Microelectronics |
| 692 |
STBB2J30-R |
800 mA 2.5 MHz, high efficiency dual mode buck-boost DC-DC converter |
ST Microelectronics |
| 693 |
STBB2JAD-R |
800 mA 2.5 MHz, high efficiency dual mode buck-boost DC-DC converter |
ST Microelectronics |
| 694 |
STD120N4F6 |
N-channel 40 V, 3.5 mOhm, 80 A, DPAK, STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
| 695 |
STD155N3H6 |
N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
| 696 |
STD60N55F3 |
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in DPAK package |
ST Microelectronics |
| 697 |
STD65N55LF3 |
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in DPAK package |
ST Microelectronics |
| 698 |
STD80 |
0.5 Micron STD80 Standard Cell Library Characteristics |
Samsung Electronic |
| 699 |
STD80 |
0.5 Micron STD80 Standard Cell Library Contents |
Samsung Electronic |
| 700 |
STD80 |
0.5 Micron STD80 Standard Cell Library Introduction |
Samsung Electronic |
| 701 |
STD80N4F6 |
Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 702 |
STDL80 |
0.5 Micron STDL80 Standard Cell Library JTAG |
Samsung Electronic |
| 703 |
STE180N10 |
N - CHANNEL 100V - 5.5 mOhm - 180A - ISOTOP POWER MOSFET |
SGS Thomson Microelectronics |
| 704 |
STE180NE10 |
N-CHANNEL 100V - 4.5 mOhm - 180A ISOTOP STripFET POWER MOSFET |
SGS Thomson Microelectronics |
| 705 |
STE180NE10 |
N-CHANNEL 100V - 4.5 MOHM -180A ISOTOP STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 706 |
STEVAL-ISA068V1 |
4 A / 1.5 MHz step-down synchronous switching regulator based on the ST1S32 in DFN 4x4 package |
ST Microelectronics |
| 707 |
STEVAL-ISA069V1 |
3 A / 1.5 MHz step-down synchronous switching regulator based on the ST1S31 in DFN 3x3 package |
ST Microelectronics |
| 708 |
STEVAL-ISA070V1 |
3 A / 1.5 MHz step-down synchronous switching regulator based on the ST1S31 in SO-8 package |
ST Microelectronics |
| 709 |
STF140N8F7 |
N-channel 80 V, 3.5 mOhm typ., 64 A STripFET F7 Power MOSFET in TO-220FP package |
ST Microelectronics |
| 710 |
STL80N75F6 |
N-channel 75 V, 4.5 mOhm typ., 18 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package |
ST Microelectronics |
| 711 |
STL8DN6LF3 |
Automotive-grade dual N-channel 60 V, 22.5 mOhm typ., 7.8 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 double island package |
ST Microelectronics |
| 712 |
STP110N55F6 |
N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package |
ST Microelectronics |
| 713 |
STP140N8F7 |
N-channel 80 V, 3.5 mOhm typ., 90 A STripFET F7 Power MOSFET in TO-220 package |
ST Microelectronics |
| 714 |
STP160N75F3 |
N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 715 |
STP180N10F3 |
N-channel 100 V, 4.5 mOhm, 120 A STripFET(TM) III Power MOSFET in TO-220 package |
ST Microelectronics |
| 716 |
STP240N10F7 |
N-channel 100 V, 2.5 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a TO-220 package |
ST Microelectronics |
| 717 |
STP80NS04Z |
N- CHANNEL CLAMPED 7.5 MOHM - 80A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET |
ST Microelectronics |
| 718 |
STW160N75F3 |
N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-247 package |
ST Microelectronics |
| 719 |
TC11L003 |
300 usable gate, 1.5 micron, CMOS gate array |
TOSHIBA |
| 720 |
TC11L005 |
500 usable gate, 1.5 micron, CMOS gate array |
TOSHIBA |
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