| No. |
Part Name |
Description |
Manufacturer |
| 691 |
AT49BV322AT |
32 Mbit, 2.7 Volt Sectored Flash |
Atmel |
| 692 |
ATF-511P8 |
ATF-511P8 · Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC |
Agilent (Hewlett-Packard) |
| 693 |
ATL35 |
The ATL35 series ASIC family is fabricated on a 0.35 micron CMOS process with up to four levels of metal. This family features arrays with up to 2.7 million routable gates and 976 pins. The high density and high pin count capabilities of t |
Atmel |
| 694 |
ATR0610-PQQ |
2.7 V GPS LOW NOISE AMPLIFIER |
Atmel |
| 695 |
AWM6268 |
2.5 to 2.7 GHz Mobile WiMAX/LTE Power Amplifier Module |
Skyworks Solutions |
| 696 |
AWT6264R |
2.3 to 2.7 GHz WiMAX Power Amplifier Module |
Skyworks Solutions |
| 697 |
AWT6264RM49P7 |
2.3 to 2.7 GHz WiMAX Power Amplifier Module |
Skyworks Solutions |
| 698 |
AWT6264RM49P8 |
2.3 to 2.7 GHz WiMAX Power Amplifier Module |
Skyworks Solutions |
| 699 |
AWT6264RM49P9 |
2.3 to 2.7 GHz WiMAX Power Amplifier Module |
Skyworks Solutions |
| 700 |
BCR112 |
Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm |
Infineon |
| 701 |
BCR112 |
Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm |
Infineon |
| 702 |
BCR112TE6327 |
Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm |
Infineon |
| 703 |
BCR112TE6327 |
Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm |
Infineon |
| 704 |
BCR112W |
Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm |
Infineon |
| 705 |
BCR112W |
Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm |
Infineon |
| 706 |
BCR116W |
Digital Transistors - R1=4.7 kOhm; R2=47 kOhm |
Infineon |
| 707 |
BCR119W |
Digital Transistors - R1=4.7 kOhm |
Infineon |
| 708 |
BCR512 |
Digital Transistors - R1=4.7 kOHm; R2=4.7 kOhm |
Infineon |
| 709 |
BCR512 |
Digital Transistors - R1=4.7 kOHm; R2=4.7 kOhm |
Infineon |
| 710 |
BUK7M6R7-40H |
N-channel 40 V, 6.7 mΩ standard level MOSFET in LFPAK33 |
Nexperia |
| 711 |
BUK7S0R7-40H |
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88 |
Nexperia |
| 712 |
BUK7Y1R7-40H |
N-channel 40 V, 1.7 mΩ standard level MOSFET in LFPAK56 |
Nexperia |
| 713 |
BUK7Y8R7-60E |
N-channel 60 V, 8.7 mΩ standard level MOSFET in LFPAK56 |
Nexperia |
| 714 |
BUK7Y8R7-60E |
N-channel 60 V, 8.7 mΩ standard level MOSFET in LFPAK56 |
NXP Semiconductors |
| 715 |
BUK9M6R7-40H |
N-channel 40 V, 6.7 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
| 716 |
BUK9Y8R7-60E |
N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56 |
Nexperia |
| 717 |
BUK9Y8R7-60E |
N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56 |
NXP Semiconductors |
| 718 |
BZV85_C100 |
100 V, 2.7 mA, Silicon planar power diode |
GOOD-ARK Electronics |
| 719 |
BZV85_C110 |
110 V, 2.7 mA, Silicon planar power diode |
GOOD-ARK Electronics |
| 720 |
BZX85C100GP |
100 V, 2.7 mA, 1.3 W glass passivated zener diode |
Fagor |
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