No. |
Part Name |
Description |
Manufacturer |
691 |
KM681002CLI-10 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
692 |
KM681002CLI-12 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
693 |
KM681002CLI-15 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
694 |
KM681002CLI-20 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
695 |
KM684000ALG-5 |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
696 |
KM684000ALGI-7L |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
697 |
KM684000ALP-7 |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
698 |
KM718FV4021H-5 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
Samsung Electronic |
699 |
KM718FV4021H-6 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
Samsung Electronic |
700 |
KM718FV4021H-7 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
Samsung Electronic |
701 |
KM736FV4021 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
Samsung Electronic |
702 |
KM736FV4021H-5 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
Samsung Electronic |
703 |
KM736FV4021H-6 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
Samsung Electronic |
704 |
KM736FV4021H-7 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM |
Samsung Electronic |
705 |
M28F101-100P1 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 100ns Access |
SGS Thomson Microelectronics |
706 |
M28F101-120N1 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 120ns Access (TSOP) |
SGS Thomson Microelectronics |
707 |
M28F101-150K1 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 150ns Access |
SGS Thomson Microelectronics |
708 |
M28F101-150P1 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 150ns Access |
SGS Thomson Microelectronics |
709 |
M28F101-150P6 |
Memory configuration 128Kx8 Memory type Flash Memory size 1 M-bit 1Mb (128K8) FLASH memory - 150ns Access |
SGS Thomson Microelectronics |
710 |
M65608E |
Rad Tolerant 5V 128Kx8 Very Low Power CMOS SRAM |
Atmel |
711 |
M65609E |
Rad Hard 3.3 Volt 128Kx8 Very Low Power CMOS SRAM |
Atmel |
712 |
MX27L1000 |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM |
Macronix International |
713 |
MX27L1000MC-12 |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM |
Macronix International |
714 |
MX27L1000MC-15 |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM |
Macronix International |
715 |
MX27L1000MC-20 |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM |
Macronix International |
716 |
MX27L1000MC-25 |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM |
Macronix International |
717 |
MX27L1000MC-90 |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM |
Macronix International |
718 |
MX27L1000MI-12 |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM |
Macronix International |
719 |
MX27L1000MI-15 |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM |
Macronix International |
720 |
MX27L1000MI-20 |
1M-BIT [128Kx8] LOW VOLTAGE OPERATION CMOS EPROM |
Macronix International |
| | | |