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Datasheets for 5 NS

Datasheets found :: 1728
Page: | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 | 28 |
No. Part Name Description Manufacturer
691 HYB514175BJ-55 256k x 16 Bit EDO DRAM 5 V 55 ns Infineon
692 ISPLSI5256VE-125LT100 In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
693 ISPLSI5256VE-125LT100I In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
694 ISPLSI5256VE-125LT128 In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
695 ISPLSI5256VE-125LT128I In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
696 ISPLSI5256VE-125LT256 In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
697 ISPLSI5256VE-125LT256I In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
698 ISPLSI5256VE-125LT272 In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
699 ISPLSI5256VE-125LT272I In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
700 ISPLSI5512VE-125LB388 In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
701 ISPLSI5512VE-125LB388I In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
702 ISPLSI5512VE-125LF256 In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
703 ISPLSI5512VE-125LF256I In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
704 ISPLSI5512VE-125LF272 In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
705 ISPLSI5512VE-125LF272I In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
706 ISPLSI5512VE-125LF388 In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
707 ISPLSI5512VE-125LF388I In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. Lattice Semiconductor
708 ISPLSI5512VE-155LB388 In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. Lattice Semiconductor
709 ISPLSI5512VE-155LF256 In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. Lattice Semiconductor
710 ISPLSI5512VE-155LF272 In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. Lattice Semiconductor
711 ISPLSI5512VE-155LF388 In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. Lattice Semiconductor
712 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
713 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
714 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
715 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
716 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
717 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
718 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
719 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
720 K4R271869B-MCK7 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic


Datasheets found :: 1728
Page: | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 | 28 |



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