No. |
Part Name |
Description |
Manufacturer |
691 |
HYB514175BJ-55 |
256k x 16 Bit EDO DRAM 5 V 55 ns |
Infineon |
692 |
ISPLSI5256VE-125LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
693 |
ISPLSI5256VE-125LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
694 |
ISPLSI5256VE-125LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
695 |
ISPLSI5256VE-125LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
696 |
ISPLSI5256VE-125LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
697 |
ISPLSI5256VE-125LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
698 |
ISPLSI5256VE-125LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
699 |
ISPLSI5256VE-125LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
700 |
ISPLSI5512VE-125LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
701 |
ISPLSI5512VE-125LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
702 |
ISPLSI5512VE-125LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
703 |
ISPLSI5512VE-125LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
704 |
ISPLSI5512VE-125LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
705 |
ISPLSI5512VE-125LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
706 |
ISPLSI5512VE-125LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
707 |
ISPLSI5512VE-125LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
708 |
ISPLSI5512VE-155LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
709 |
ISPLSI5512VE-155LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
710 |
ISPLSI5512VE-155LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
711 |
ISPLSI5512VE-155LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
712 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
713 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
714 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
715 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
716 |
K4R271669B-MCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
717 |
K4R271669B-MCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. |
Samsung Electronic |
718 |
K4R271669B-NCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz |
Samsung Electronic |
719 |
K4R271669B-NCK8 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz |
Samsung Electronic |
720 |
K4R271869B-MCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
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