| No. |
Part Name |
Description |
Manufacturer |
| 691 |
EPM7512AEBI256-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 10ns |
Altera Corporation |
| 692 |
EPM7512AEFC256-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 10ns |
Altera Corporation |
| 693 |
EPM7512AEFI256-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 212 I/O pins, 10ns |
Altera Corporation |
| 694 |
ESABR246-1000G3-48V-038L |
Relays |
Microsemi |
| 695 |
ESM216-1000 |
Thyristors - normal series |
SESCOSEM |
| 696 |
FS1416-105K |
FERRITE SHIELDED INDUCTORS |
etc |
| 697 |
FX6-100P-0.8SV |
0.8mm Pitch Stacking Height 5 to 9mm Connector |
Hirose Electric |
| 698 |
FX6-100P-0.8SV1 |
0.8mm Pitch Stacking Height 5 to 9mm Connector |
Hirose Electric |
| 699 |
FX6-100P-0.8SV2 |
0.8mm Pitch Stacking Height 5 to 9mm Connector |
Hirose Electric |
| 700 |
FX6-100S-0.8SV |
0.8mm Pitch Stacking Height 5 to 9mm Connector |
Hirose Electric |
| 701 |
GEN6-100 |
Programmable DC Power Supplies 750W/1500W |
DENSEI-LAMBDA |
| 702 |
GLT40516-10E |
32k x 16 embedded EDO DRAM |
G-LINK Technology |
| 703 |
GLT41016-10E |
64k x 16 embedded EDO DRAM |
G-LINK Technology |
| 704 |
GLT5160L16-10FJ |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
etc |
| 705 |
GLT5160L16-10TC |
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
etc |
| 706 |
GLT5160L16-10TC |
100 MHz; 16M (2-bank x 524288-word x 16 bit) synchronous DRAM |
G-LINK Technology |
| 707 |
GLT5640AL16-10TC |
4M X 16 CMOS Synchronous Dynamic RAM |
etc |
| 708 |
HIF6-100D-1.27R |
1.27mm Pitch Two-Piece Connector |
Hirose Electric |
| 709 |
HIF6-100PA-1.27DS |
1.27mm Pitch Two-Piece Connector |
Hirose Electric |
| 710 |
HIF6-100PA-1.27DSA |
1.27mm Pitch Two-Piece Connector |
Hirose Electric |
| 711 |
HY62C256-10 |
32K x 8-BIT CMOS SRAM |
Hynix Semiconductor |
| 712 |
HYB41256-10 |
262,144 BIT DYNAMIC RAM |
Siemens |
| 713 |
IC61C3216-10K |
10ns; 3.3V; 32K x 16 high-speed CMOS static RAM |
ICSI |
| 714 |
IC61C3216-10T |
10ns; 3.3V; 32K x 16 high-speed CMOS static RAM |
ICSI |
| 715 |
IC61C6416-10K |
12ns; 5V; 64K x 16 high-speed CMOS static RAM |
ICSI |
| 716 |
IC61C6416-10K |
64K X 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Circuit Solution Inc |
| 717 |
IC61C6416-10T |
10ns; 5V; 64K x 16 high-speed CMOS static RAM |
ICSI |
| 718 |
IC61C6416-10T |
64K X 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Circuit Solution Inc |
| 719 |
IC61C6416-10TI |
10ns; 5V; 64K x 16 high-speed CMOS static RAM |
ICSI |
| 720 |
IC61LV12816-10B |
10ns; 3.3V; 128K x 16 high-speed CMOS static RAM |
ICSI |
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