DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for E 10

Datasheets found :: 2967
Page: | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 | 28 |
No. Part Name Description Manufacturer
691 1N5378B Zener Diode 100V 5W Motorola
692 1N5378B Diode Zener Single 100V 5W 2-Pin DO-201AE New Jersey Semiconductor
693 1N5378C Diode Zener Single 100V 2% 5W 2-Pin Case T-18 New Jersey Semiconductor
694 1N5378D Diode Zener Single 100V 1% 5W 2-Pin Case T-18 New Jersey Semiconductor
695 1N5392 Rectifier Diode 100V 1.5A Motorola
696 1N5392 Diode 100V 1.5A Automotive 2-Pin DO-15 New Jersey Semiconductor
697 1N5392G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. Jinan Gude Electronic Device
698 1N5392G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. Jinan Gude Electronic Device
699 1N5399 Rectifier Diode 1000V 1.5A Motorola
700 1N5399G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. Jinan Gude Electronic Device
701 1N5399G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. Jinan Gude Electronic Device
702 1N5401 Rectifier Diode 100V 3A Motorola
703 1N5401 Diode 100V 3A 2-Pin DO-201AD New Jersey Semiconductor
704 1N5408 Rectifier Diode 1000V 3A Motorola
705 1N5416 Rectifier Diode 100V Motorola
706 1N5530 Diode Zener Single 10V 20% 400mW 2-Pin DO-35 New Jersey Semiconductor
707 1N5530A 0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-10% tolerance. Jinan Gude Electronic Device
708 1N5530A Diode Zener Single 10V 10% 400mW 2-Pin DO-35 New Jersey Semiconductor
709 1N5530B 0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-5% tolerance. Jinan Gude Electronic Device
710 1N5530B Diode Zener Single 10V 5% 400mW 2-Pin DO-35 New Jersey Semiconductor
711 1N5530C Diode Zener Single 10V 2% 400mW 2-Pin DO-35 New Jersey Semiconductor
712 1N5530D Diode Zener Single 10V 1% 400mW 2-Pin DO-35 New Jersey Semiconductor
713 1N5622GP Glass Passivated Medium-Switching Junction Rectifiers, Forward Current 1.0A, Reverse Voltage 1000V Vishay
714 1N5623GP Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A, Reverse Voltage 1000V Vishay
715 1N5736 Diode Zener Single 10V 20% 500mW 2-Pin DO-35 New Jersey Semiconductor
716 1N5736B Diode Zener Single 10V 5% 500mW 2-Pin DO-35 New Jersey Semiconductor
717 1N5736C Diode Zener Single 10V 2% 500mW 2-Pin DO-35 New Jersey Semiconductor
718 1N5736D Diode Zener Single 10V 1% 500mW 2-Pin DO-35 New Jersey Semiconductor
719 1N5925 1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-20% tolerance. Jinan Gude Electronic Device
720 1N5925 Diode Zener Single 10V 20% 1.5W 2-Pin DO-41 New Jersey Semiconductor


Datasheets found :: 2967
Page: | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 | 28 |



© 2024 - www Datasheet Catalog com