| No. |
Part Name |
Description |
Manufacturer |
| 691 |
2N6491 |
15A complementary silicon plastic 75W power PNP transistor |
Motorola |
| 692 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 693 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 694 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 695 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 696 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 697 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 698 |
2N6609 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 699 |
2N6609 |
16A complementary power transistor 140V 150W |
Motorola |
| 700 |
2N6648 |
15A peak complementary silicon power darlington PNP transistor |
Motorola |
| 701 |
2N6649 |
15A peak complementary silicon power darlington PNP transistor |
Motorola |
| 702 |
2N6650 |
15A peak complementary silicon power darlington PNP transistor |
Motorola |
| 703 |
2N6659 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
| 704 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 705 |
2N6661 |
N-Channel Enhancement Mode MOSFETs |
Microchip |
| 706 |
2N6661 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
| 707 |
2N6661 |
MOSPOWER N-Channel Enhancement Mode Transistor 80V 0.28A |
Siliconix |
| 708 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 709 |
2N6718L |
Mini size of Discrete semiconductor elements |
SINYORK |
| 710 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 711 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 712 |
2N6756 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
| 713 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 714 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 715 |
2N6758 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
| 716 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 717 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 718 |
2N6760 |
MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A |
Siliconix |
| 719 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 720 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
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