| No. |
Part Name |
Description |
Manufacturer |
| 691 |
BQ24650RVAT |
High Efficiency Synchronous Switch-Mode Charger Controller ? Solar Battery Charger 16-VQFN -40 to 85 |
Texas Instruments |
| 692 |
BQ26231 |
Cost-Efficient Coulomb Counter for Battery Capacity Monitoring In Embedded Portable Applications |
Texas Instruments |
| 693 |
BQ26231PW |
Cost-Efficient Coulomb Counter for Battery Capacity Monitoring In Embedded Portable Applications |
Texas Instruments |
| 694 |
BQ26231PWG4 |
Cost-Efficient Coulomb Counter for Battery Capacity Monitoring In Embedded Portable Applications 8-TSSOP -20 to 70 |
Texas Instruments |
| 695 |
BQ26231PWR |
Cost-Efficient Coulomb Counter for Battery Capacity Monitoring In Embedded Portable Applications |
Texas Instruments |
| 696 |
BQ26231PWRG4 |
Cost-Efficient Coulomb Counter for Battery Capacity Monitoring In Embedded Portable Applications 8-TSSOP -20 to 70 |
Texas Instruments |
| 697 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 698 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 699 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 700 |
BX DIELECTRIC |
Monolithic Ceramic Chip Capacitors, Designed for Excellent Temperature Voltage Coefficient, Excellent Aging Characteristics |
Vishay |
| 701 |
BXY28 |
Silicon planar epitaxial varactor diode for use in high C efficiency multipliers in the 2-4 GHz range |
Mullard |
| 702 |
BY188A |
Efficiency diode |
mble |
| 703 |
BY188B |
Efficiency diode |
mble |
| 704 |
BYG20D |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 705 |
BYG20G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 706 |
BYG20J |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 707 |
BYG23M |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 708 |
BYM07-100 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 709 |
BYM07-150 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 710 |
BYM07-200 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 711 |
BYM07-300 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 712 |
BYM07-400 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 713 |
BYM07-50 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 714 |
BYM12-100 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 715 |
BYM12-150 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 716 |
BYM12-200 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 717 |
BYM12-300 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 718 |
BYM12-400 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 719 |
BYM12-50 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER |
General Semiconductor |
| 720 |
BYT30G-400 |
HIGH EFFICIENCY FAST RECOVERY DIODES |
SGS Thomson Microelectronics |
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