| No. |
Part Name |
Description |
Manufacturer |
| 691 |
2N1711 |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 692 |
2N1711 |
NPN Transistor - General purpose AMPS and switches |
National Semiconductor |
| 693 |
2N1711 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
| 694 |
2N1711A |
Low power, general purpose NPN transistor, metal case |
IPRS Baneasa |
| 695 |
2N1792 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 696 |
2N1793 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 697 |
2N1794 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 698 |
2N1795 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 699 |
2N1796 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 700 |
2N1797 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 701 |
2N1798 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 702 |
2N1799 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 703 |
2N1805 |
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 704 |
2N1806 |
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 705 |
2N1807 |
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 706 |
2N1839 |
General purpose transistor |
Boca Semiconductor Corporation |
| 707 |
2N1893 |
GENERAL PURPOSE TRANSISTOR NPN SILICON |
Boca Semiconductor Corporation |
| 708 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 709 |
2N1893 |
General purpose NPN transistor |
FERRANTI |
| 710 |
2N1893 |
GENERAL PURPOSE HIGH-VOLTAGE TYPE |
SGS Thomson Microelectronics |
| 711 |
2N1893 |
Silicon NPN planar general purpose transistor |
Transitron Electronic |
| 712 |
2N1909 |
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 713 |
2N1910 |
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 714 |
2N1911 |
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 715 |
2N1912 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 716 |
2N1913 |
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 717 |
2N1914 |
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 718 |
2N1915 |
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 719 |
2N1916 |
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications |
International Rectifier |
| 720 |
2N1991 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
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