| No. |
Part Name |
Description |
Manufacturer |
| 691 |
BFR14A |
NPN silicon planar microwave transistor |
Siemens |
| 692 |
BFR14B |
NPN silicon planar microwave transistor |
Siemens |
| 693 |
BFR14B |
NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz |
Siemens |
| 694 |
BFR14C |
NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz |
Siemens |
| 695 |
BFR49 |
NPN silicon microwave transistor, suitable for amplifiers up to S-band frequencies |
Philips |
| 696 |
BFR90 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 697 |
BFR91 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 698 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 699 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 700 |
BFR96 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 701 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
| 702 |
BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) |
Siemens |
| 703 |
BFY181 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 704 |
BFY182 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 705 |
BFY183 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 706 |
BFY193 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) |
Siemens |
| 707 |
BFY196 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) |
Siemens |
| 708 |
BFY280 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) |
Siemens |
| 709 |
BFY90 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Microsemi |
| 710 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 711 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 712 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 713 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 714 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 715 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 716 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 717 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 718 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 719 |
BGY14E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 720 |
BGY14FA1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
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