| No. |
Part Name |
Description |
Manufacturer |
| 691 |
3N151 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 692 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 693 |
3N155 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 694 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 695 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 696 |
3N155A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 697 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 698 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 699 |
3N156 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 700 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 701 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 702 |
3N156A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 703 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 704 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 705 |
3N157 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 706 |
3N157 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| 707 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 708 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 709 |
3N157A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 710 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 711 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 712 |
3N158 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 713 |
3N158 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
| 714 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 715 |
3N158A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 716 |
3N158A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 717 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 718 |
3N160 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 719 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 720 |
3N161 |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
Intersil |
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