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Datasheets for PPL

Datasheets found :: 76817
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No. Part Name Description Manufacturer
691 12CWQ10GTRLPBF The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward International Rectifier
692 12CWQ10GTRPBF The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward International Rectifier
693 12CWQ10GTRR The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward International Rectifier
694 12CWQ10GTRRPBF The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward International Rectifier
695 12F100B V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls International Rectifier
696 12F120B V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls International Rectifier
697 1318 Single 5V RS232/RS422/AppleTalk DCE Transceiver Linear Technology
698 1416-100 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
699 1416-200 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
700 1417-12 1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
701 1417-25 1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications SGS Thomson Microelectronics
702 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics
703 1511-8 Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz SGS Thomson Microelectronics
704 1526-1 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
705 1526-8 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
706 1527-8 Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications SGS Thomson Microelectronics
707 1528-6 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS SGS Thomson Microelectronics
708 1528-6 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ST Microelectronics
709 1528-8 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS SGS Thomson Microelectronics
710 1528-8 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ST Microelectronics
711 1530-1 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS SGS Thomson Microelectronics
712 1530-1 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ST Microelectronics
713 1530-8 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS SGS Thomson Microelectronics
714 1530-8 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ST Microelectronics
715 1534-1 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS SGS Thomson Microelectronics
716 1534-1 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ST Microelectronics
717 1536-3 NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications SGS Thomson Microelectronics
718 1536-8 NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications SGS Thomson Microelectronics
719 1538-8 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS SGS Thomson Microelectronics
720 1538-8 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ST Microelectronics


Datasheets found :: 76817
Page: | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 | 28 |



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