| No. |
Part Name |
Description |
Manufacturer |
| 691 |
2B1N52 |
1N52 SERIES ZENER DIODES |
Leshan Radio Company |
| 692 |
2N1705 |
PNP germanium transistor for audio driver applications in transistorized radio receivers |
Motorola |
| 693 |
2N1706 |
PNP germanium transistor for audio driver applications in transistorized radio receivers |
Motorola |
| 694 |
2N1707 |
PNP germanium transistor for audio driver applications in transistorized radio receivers |
Motorola |
| 695 |
2N7002LT1 |
Small Signal MOSFET 115 mAmps, 60 Volts |
Leshan Radio Company |
| 696 |
2N7002LT3 |
Small Signal MOSFET 115 mAmps, 60 Volts |
Leshan Radio Company |
| 697 |
2SA1037 |
General Purpose Transistors(PNP Silicon) |
Leshan Radio Company |
| 698 |
2SA1037AK |
General Purpose Transistors(PNP Silicon) |
Leshan Radio Company |
| 699 |
2SA1037AKQLT1 |
General Purpose Transistors(PNP Silicon) |
Leshan Radio Company |
| 700 |
2SA1037AKRLT1 |
General Purpose Transistors(PNP Silicon) |
Leshan Radio Company |
| 701 |
2SA1037AKSLT1 |
General Purpose Transistors(PNP Silicon) |
Leshan Radio Company |
| 702 |
2SA49 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 703 |
2SA495 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 704 |
2SA52 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 705 |
2SA53 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 706 |
2SA640 |
PNP silicon transistor designed for use in AF low noise amplifier of STEREOSET, RADIO and TAPE RECORDER |
NEC |
| 707 |
2SA750 |
PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER |
NEC |
| 708 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 709 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
| 710 |
2SC1122A |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio Output Stage applications (low supply voltage use) |
TOSHIBA |
| 711 |
2SC1164 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 712 |
2SC1168 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 713 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| 714 |
2SC2412 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 715 |
2SC2412KLT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 716 |
2SC2412KQKT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 717 |
2SC2412KQLT1 |
50 V, general purpose transistor |
Leshan Radio Company |
| 718 |
2SC2412KRLT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 719 |
2SC2412KSLT1 |
General Purpose Transistors(NPN Silicon) |
Leshan Radio Company |
| 720 |
2SC2690 |
Use in audio and radio Frequency power amplifiers. |
NEC |
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