| No. |
Part Name |
Description |
Manufacturer |
| 691 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 692 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 693 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 694 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 695 |
K4F151611 |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 696 |
K4F151611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 697 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 698 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 699 |
K4F151612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 700 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 701 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 702 |
K4F16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 703 |
K4F160411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 704 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 705 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 706 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 707 |
K4F160411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 708 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 709 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 710 |
K4F160412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 711 |
K4F160412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 712 |
K4F160412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 713 |
K4F160412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 714 |
K4F160412D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 715 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 716 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 717 |
K4F160811D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 718 |
K4F160811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 719 |
K4F160811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 720 |
K4F160812D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
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