| No. |
Part Name |
Description |
Manufacturer |
| 691 |
ISL31483E |
Fault Protected, Extended CMR, RS-485/RS-422 Transceivers with Cable Invert |
Intersil |
| 692 |
ISL31485E |
Fault Protected, Extended CMR, RS-485/RS-422 Transceivers with Cable Invert |
Intersil |
| 693 |
ISL32470E |
Fault Protected, Extended Common Mode Range, RS-485/RS-422 Transceivers with 16.5kV ESD |
Intersil |
| 694 |
ISL32472E |
Fault Protected, Extended Common Mode Range, RS-485/RS-422 Transceivers with 16.5kV ESD |
Intersil |
| 695 |
ISL32475E |
Fault Protected, Extended Common Mode Range, RS-485/RS-422 Transceivers with 16.5kV ESD |
Intersil |
| 696 |
ISL32478E |
Fault Protected, Extended Common Mode Range, RS-485/RS-422 Transceivers with 16.5kV ESD |
Intersil |
| 697 |
ISL32483E |
Fault Protected, Extended CMR, RS-485/RS-422 Transceivers with Cable Invert and �16.5kV ESD |
Intersil |
| 698 |
ISL32485E |
Fault Protected, Extended CMR, RS-485/RS-422 Transceivers with Cable Invert and �16.5kV ESD |
Intersil |
| 699 |
ISL36111 |
11.1Gb/s Lane Extender |
Intersil |
| 700 |
ISL36411 |
Quad Lane Extender |
Intersil |
| 701 |
ISL8105B |
+5V or +12V Single-Phase Synchronous Buck Converter PWM Controller with Integrated MOSFET Gate Drivers, Extended Soft-Start Time |
Intersil |
| 702 |
ITT9005 |
High Speed TTL Extendable AND-OR-Invert Gates |
ITT Semiconductors |
| 703 |
ITT9006 |
High Speed TTL Extender |
ITT Semiconductors |
| 704 |
ITT9008 |
High Speed TTL Extendable AND-OR-Invert Gates |
ITT Semiconductors |
| 705 |
ITT933 |
Dual Four-Input Extender |
ITT Semiconductors |
| 706 |
ITT935 |
Extendable HEX-Inverter |
ITT Semiconductors |
| 707 |
K4D623238B-G(Q)C |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet |
Samsung Electronic |
| 708 |
K4E151611 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 709 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 710 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 711 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 712 |
K4E151612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 713 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 714 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 715 |
K4E16(7)0411(2)D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 716 |
K4E16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 717 |
K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 718 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 719 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 720 |
K4E160412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
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