| No. |
Part Name |
Description |
Manufacturer |
| 691 |
ISL6307B |
6-Phase VR11 PWM Controller with 8-Bit VID Code Capable of Precision RDS(ON) or DCR Differential Current Sensing for Applications in Which Supply Voltage is Higher than 5V |
Intersil |
| 692 |
ISL653031EVAL1 |
Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination |
Intersil |
| 693 |
ISL6530CB |
Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination |
Intersil |
| 694 |
ISL6530CR |
Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination |
Intersil |
| 695 |
ISL6530EVAL1 |
Dual 5V synchronous buck pulse-width modulator PWM controller for DDRAM memory V(ddq) and T(tt) termination |
Intersil |
| 696 |
ISL6531CB |
Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination |
Intersil |
| 697 |
ISL6531CR |
Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination |
Intersil |
| 698 |
ISL6531EVAL1 |
Dual 5V synchronous buck pulse-width modulator PWM controller for DDRAM memory V(ddq) and T(tt) termination |
Intersil |
| 699 |
ISL9491 |
Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications |
Intersil |
| 700 |
ISL9491A |
Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications |
Intersil |
| 701 |
JAN-2N1118 |
SPAT® PNP silicon transistor switch and amplifiers, military version |
Sprague |
| 702 |
JAN-2N1119 |
SPAT® PNP silicon transistor switch and amplifiers, military version |
Sprague |
| 703 |
JAN-2N128 |
SBT PNP switch - germanium transistor, military version |
Sprague |
| 704 |
JAN-2N240 |
SBT PNP switch - germanium transistor, military version |
Sprague |
| 705 |
JAN-2N393 |
MAT® PNP switch - germanium transistor, military version |
Sprague |
| 706 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 707 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 708 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 709 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 710 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 711 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 712 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 713 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 714 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 715 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 716 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 717 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 718 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 719 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 720 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
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