| No. |
Part Name |
Description |
Manufacturer |
| 6961 |
BCX70J |
General Purpose Transistors - SOT23; VCEO=45 V |
Infineon |
| 6962 |
BCX70K |
General Purpose Transistors - SOT23; VCEO=45 V |
Infineon |
| 6963 |
BCX71 |
PNP Silicon AF Transistor |
Infineon |
| 6964 |
BCX71G |
General Purpose Transistors - SOT23; VCEO=45V |
Infineon |
| 6965 |
BCX71H |
General Purpose Transistors - SOT23; VCEO=45V |
Infineon |
| 6966 |
BCX71J |
General Purpose Transistors - SOT23; VCEO=45V |
Infineon |
| 6967 |
BCX71K |
General Purpose Transistors - SOT23; VCEO=45V |
Infineon |
| 6968 |
BDP 955 E6327 |
Single AF Transistors for General Purpose |
Infineon |
| 6969 |
BDP947 |
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages |
Infineon |
| 6970 |
BDP948 |
General Purpose Transistors - SOT223 package |
Infineon |
| 6971 |
BDP949 |
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages |
Infineon |
| 6972 |
BDP950 |
General Purpose Transistors - SOT223 package |
Infineon |
| 6973 |
BDP951 |
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages |
Infineon |
| 6974 |
BDP952 |
General Purpose Transistors - SOT223 package |
Infineon |
| 6975 |
BDP953 |
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages |
Infineon |
| 6976 |
BDP954 |
General Purpose Transistors - SOT223 package |
Infineon |
| 6977 |
BDP955 |
General Purpose Transistors - NPN Silicon AF Power Transistor for AF driver and output stages |
Infineon |
| 6978 |
BDP956 |
General Purpose Transistors - SOT223 package |
Infineon |
| 6979 |
BF |
Precision Rotative Transducers, Conductive Plastic, Bushing Mounting, Size 08 to 30, Good Repeatability, Long Life, Essentially Infinite Resolution, Up to 6 Electrical Functions on the Same Shaft |
Vishay |
| 6980 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 6981 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 6982 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 6983 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 6984 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 6985 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 6986 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 6987 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 6988 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 6989 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 6990 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
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