| No. |
Part Name |
Description |
Manufacturer |
| 6991 |
NM93CS56MN |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
| 6992 |
NM93CS56N |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
| 6993 |
NM93CS66EM8 |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
| 6994 |
NM93CS66EN |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
| 6995 |
NM93CS66M8 |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
| 6996 |
NM93CS66MM8 |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
| 6997 |
NM93CS66MN |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
| 6998 |
NM93CS66N |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
| 6999 |
NMC2116J-20 |
200 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 7000 |
NMC2116J-20L |
200 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 7001 |
NMC2116J-25L |
250 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 7002 |
NMC2116N-20 |
200 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 7003 |
NMC2116N-20L |
200 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 7004 |
NMC2116N-25L |
250 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 7005 |
NMC27C010Q15 |
150 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7006 |
NMC27C010Q150 |
150 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7007 |
NMC27C010Q17 |
170 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7008 |
NMC27C010Q170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7009 |
NMC27C010Q20 |
200 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7010 |
NMC27C010Q200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7011 |
NMC27C010Q25 |
250 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7012 |
NMC27C010Q250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7013 |
NMC27C010QE170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7014 |
NMC27C010QE200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7015 |
NMC27C010QE250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7016 |
NMC27C010QM170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7017 |
NMC27C010QM200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7018 |
NMC27C010QM250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7019 |
NMC27C1024Q12 |
120 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 7020 |
NMC27C1024Q120 |
120 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
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