| No. |
Part Name |
Description |
Manufacturer |
| 7081 |
1S2578 |
Silicon diffused junction rectifier 1A 400V |
TOSHIBA |
| 7082 |
1S2579 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
| 7083 |
1S2580 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
| 7084 |
1S2581 |
Silicon diffused junction rectifier 1A 1000V |
TOSHIBA |
| 7085 |
1S2582 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
| 7086 |
1S2583 |
Silicon diffused junction rectifier 3A 200V |
TOSHIBA |
| 7087 |
1S2584 |
Silicon diffused junction rectifier 3A 400V |
TOSHIBA |
| 7088 |
1S2585 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
| 7089 |
1S2586 |
Silicon diffused junction rectifier 3A 800V |
TOSHIBA |
| 7090 |
1S2615 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 7091 |
1S2616 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 7092 |
1S2617 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 7093 |
1S290 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 7094 |
1S290R |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 7095 |
1S3 |
TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
| 7096 |
1S3 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 7097 |
1S30 |
1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
| 7098 |
1S30 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 7099 |
1S30 |
SCHOTTKY BARRIER RECTIFIER |
Rectron Semiconductor |
| 7100 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7101 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7102 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7103 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7104 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7105 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7106 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7107 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7108 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7109 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7110 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
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