| No. |
Part Name |
Description |
Manufacturer |
| 7081 |
BSY56 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 7082 |
BSY56 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
| 7083 |
BSY58 |
Double-diffused epitaxial NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 7084 |
BSY70 |
Silicon NPN Planar-Epitaxial Very Fast Switching Transistor |
TELEFUNKEN |
| 7085 |
BSY88 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 7086 |
BSY93 |
Silicon NPN epitaxial planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 7087 |
BU125S |
Silicon epitaxial planar NPN high voltage transistor |
SGS-ATES |
| 7088 |
BU126 |
NPN silicon multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7089 |
BU126A |
NPN silicon multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7090 |
BU326A |
NPN silicon, multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7091 |
BU326S |
NPN silicon, multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7092 |
BU326S |
Silicon multiepitaxial biplanar® NPN high voltage power transistor intended for switch-mode CTV applications |
SGS-ATES |
| 7093 |
BU406 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7094 |
BU406 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 7095 |
BU406 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 7096 |
BU406 |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 7097 |
BU406D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 7098 |
BU406D |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 7099 |
BU406H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7100 |
BU406H |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 7101 |
BU406H |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 7102 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 7103 |
BU406TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7104 |
BU407 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7105 |
BU407 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 7106 |
BU407 |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 7107 |
BU407 |
SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 7108 |
BU407D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 7109 |
BU407H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7110 |
BU407H |
330 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| | | |
