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Datasheets for TEMPERATURE

Datasheets found :: 7187
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No. Part Name Description Manufacturer
7111 VRE125M Precision high temperature reference supply THALER CORPORATION
7112 VRE125MA Precision high temperature reference supply THALER CORPORATION
7113 VRE127C Precision high temperature reference supply THALER CORPORATION
7114 VRE127CA Precision high temperature reference supply THALER CORPORATION
7115 VRE127M Precision high temperature reference supply THALER CORPORATION
7116 VRE127MA Precision high temperature reference supply THALER CORPORATION
7117 VT1697SB Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
7118 VT1697SBFQ Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
7119 VT1697SBFQ+CNR Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
7120 VT1697SBFQ-008 Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
7121 VT1697SBFQR Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
7122 VT1697SBFQR-008 Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
7123 VT1697SBFQX Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
7124 VT1697SBFQX+CN9 Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
7125 VT1697SBFQX+CNR Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
7126 VT1697SBFQX-008 Smart Slave IC with Integrated Current and Temperature Sensors MAXIM - Dallas Semiconductor
7127 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7128 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7129 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7130 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7131 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7132 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7133 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7134 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7135 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7136 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7137 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7138 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7139 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7140 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 7187
Page: | 234 | 235 | 236 | 237 | 238 | 239 | 240 |



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