No. |
Part Name |
Description |
Manufacturer |
7111 |
VRE125M |
Precision high temperature reference supply |
THALER CORPORATION |
7112 |
VRE125MA |
Precision high temperature reference supply |
THALER CORPORATION |
7113 |
VRE127C |
Precision high temperature reference supply |
THALER CORPORATION |
7114 |
VRE127CA |
Precision high temperature reference supply |
THALER CORPORATION |
7115 |
VRE127M |
Precision high temperature reference supply |
THALER CORPORATION |
7116 |
VRE127MA |
Precision high temperature reference supply |
THALER CORPORATION |
7117 |
VT1697SB |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
7118 |
VT1697SBFQ |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
7119 |
VT1697SBFQ+CNR |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
7120 |
VT1697SBFQ-008 |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
7121 |
VT1697SBFQR |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
7122 |
VT1697SBFQR-008 |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
7123 |
VT1697SBFQX |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
7124 |
VT1697SBFQX+CN9 |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
7125 |
VT1697SBFQX+CNR |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
7126 |
VT1697SBFQX-008 |
Smart Slave IC with Integrated Current and Temperature Sensors |
MAXIM - Dallas Semiconductor |
7127 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7128 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7129 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7130 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7131 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7132 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7133 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7134 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7135 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7136 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7137 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7138 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7139 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7140 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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