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Datasheets for 0V,

Datasheets found :: 15162
Page: | 234 | 235 | 236 | 237 | 238 | 239 | 240 | 241 | 242 |
No. Part Name Description Manufacturer
7111 KBU801-G Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A Comchip Technology
7112 KBU801-G Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A Comchip Technology
7113 KBU802-G Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A Comchip Technology
7114 KBU802-G Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A Comchip Technology
7115 KBU804-G Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=8A Comchip Technology
7116 KBU804-G Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=8A Comchip Technology
7117 KBU806-G Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=8A Comchip Technology
7118 KBU806-G Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=8A Comchip Technology
7119 KBU808-G Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=8A Comchip Technology
7120 KBU808-G Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=8A Comchip Technology
7121 KBU810-G Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=8A Comchip Technology
7122 KBU810-G Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=8A Comchip Technology
7123 KF12N60F ��VDSS=600V, ID=12A Korea Electronics (KEC)
7124 KM416C1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms Samsung Electronic
7125 KM416C1004CJ-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms Samsung Electronic
7126 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
7127 KM416C1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
7128 KM416C1004CJL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
7129 KM416C1004CJL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
7130 KM416C1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
7131 KM416C1004CTL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
7132 KM416C1004CTL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
7133 KM416C1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms Samsung Electronic
7134 KM416C1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
7135 KM416C1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
7136 KM416C1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
7137 KM416C1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
7138 KM416C1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
7139 KM416C1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
7140 KM416C1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic


Datasheets found :: 15162
Page: | 234 | 235 | 236 | 237 | 238 | 239 | 240 | 241 | 242 |



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