No. |
Part Name |
Description |
Manufacturer |
7111 |
KBU801-G |
Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A |
Comchip Technology |
7112 |
KBU801-G |
Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A |
Comchip Technology |
7113 |
KBU802-G |
Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A |
Comchip Technology |
7114 |
KBU802-G |
Bridge Rectifiers, VRRM=100V, VDC=100V, I(AV)=8A |
Comchip Technology |
7115 |
KBU804-G |
Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=8A |
Comchip Technology |
7116 |
KBU804-G |
Bridge Rectifiers, VRRM=400V, VDC=400V, I(AV)=8A |
Comchip Technology |
7117 |
KBU806-G |
Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=8A |
Comchip Technology |
7118 |
KBU806-G |
Bridge Rectifiers, VRRM=600V, VDC=600V, I(AV)=8A |
Comchip Technology |
7119 |
KBU808-G |
Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=8A |
Comchip Technology |
7120 |
KBU808-G |
Bridge Rectifiers, VRRM=800V, VDC=800V, I(AV)=8A |
Comchip Technology |
7121 |
KBU810-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=8A |
Comchip Technology |
7122 |
KBU810-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=8A |
Comchip Technology |
7123 |
KF12N60F |
��VDSS=600V, ID=12A |
Korea Electronics (KEC) |
7124 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
7125 |
KM416C1004CJ-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
7126 |
KM416C1004CJ-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
7127 |
KM416C1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7128 |
KM416C1004CJL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7129 |
KM416C1004CJL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7130 |
KM416C1004CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7131 |
KM416C1004CTL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7132 |
KM416C1004CTL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7133 |
KM416C1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
7134 |
KM416C1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
7135 |
KM416C1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
7136 |
KM416C1204CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7137 |
KM416C1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7138 |
KM416C1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
7139 |
KM416C1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
7140 |
KM416C1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
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