No. |
Part Name |
Description |
Manufacturer |
7111 |
KM416V1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
7112 |
KM416V1204CT-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
7113 |
KM416V1204CT-5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
7114 |
KM416V1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
7115 |
KM416V1204CT-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
7116 |
KM416V1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
7117 |
KM416V1204CT-L5 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
7118 |
KM416V1204CT-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
7119 |
KM416V1204CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
7120 |
KM416V1204CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
7121 |
KM416V1204CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
7122 |
KM416V254D |
256K x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
7123 |
KM416V254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
7124 |
KM416V254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
7125 |
KM416V254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
7126 |
KM416V254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
7127 |
KM416V254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
7128 |
KM416V254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
7129 |
KM416V254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
7130 |
KM416V254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
7131 |
KM416V254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
7132 |
KM416V254DTL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
7133 |
KM416V254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
7134 |
KM416V254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
7135 |
KM416V4004B |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
7136 |
KM416V4004BS-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
7137 |
KM416V4004BS-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
7138 |
KM416V4004BS-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
7139 |
KM416V4004BSL-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
7140 |
KM416V4004BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
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