| No. |
Part Name |
Description |
Manufacturer |
| 7111 |
BU326S |
NPN silicon, multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 7112 |
BU326S |
Silicon multiepitaxial biplanar® NPN high voltage power transistor intended for switch-mode CTV applications |
SGS-ATES |
| 7113 |
BU406 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7114 |
BU406 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 7115 |
BU406 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 7116 |
BU406 |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 7117 |
BU406D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 7118 |
BU406D |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 7119 |
BU406H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7120 |
BU406H |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 7121 |
BU406H |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 7122 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 7123 |
BU406TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7124 |
BU407 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7125 |
BU407 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 7126 |
BU407 |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 7127 |
BU407 |
SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 7128 |
BU407D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 7129 |
BU407H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7130 |
BU407H |
330 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 7131 |
BU407H |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 7132 |
BU407HTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7133 |
BU407TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7134 |
BU408 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 7135 |
BU408 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 7136 |
BU408 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 7137 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 7138 |
BU408D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 7139 |
BU409 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
| 7140 |
BU505 |
HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR |
SGS Thomson Microelectronics |
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