| No. |
Part Name |
Description |
Manufacturer |
| 7111 |
2SA1072 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
| 7112 |
2SA1072A |
Silicon High Speed Power PNP Transistor |
Fujitsu Microelectronics |
| 7113 |
2SA1073 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
| 7114 |
2SA1075 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
| 7115 |
2SA1076 |
160V PNP silicon general purpose high speed power transistor |
Fujitsu Microelectronics |
| 7116 |
2SA1077 |
SILICON HIGH SPEED POWER TRANSISTOR |
Fujitsu Microelectronics |
| 7117 |
2SA1078 |
SILICON PNP RING EMITTER TRANSISTOR (RET) |
Fujitsu Microelectronics |
| 7118 |
2SA1080 |
SILICON PNP RING EMITTER TRANSISTOR(RET) |
Fujitsu Microelectronics |
| 7119 |
2SA1223 |
PNP silicon high frequency transistor (This datasheet of the NE88935 is also the datasheet of 2SA1223, see the Electrical Characteristics table) |
NEC |
| 7120 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 7121 |
2SA1228 |
PNP silicon high frequency transistor (This datasheet of NE88912 is also the datasheet of 2SA1228, see the Electrical Characteristics table) |
NEC |
| 7122 |
2SA1235A |
PNP TRANSISTOR |
DONG GUAN SHI HUA YUAN ELECTRON CO. |
| 7123 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
| 7124 |
2SA1266 |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
| 7125 |
2SA1266L |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
| 7126 |
2SA1270 |
Transistors |
Korea Electronics (KEC) |
| 7127 |
2SA1271 |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
| 7128 |
2SA1273 |
Silicon PNP Transistor Epitaxial Planar Type(PCT PROCESS) |
Korea Electronics (KEC) |
| 7129 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 7130 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 7131 |
2SA1283 |
SILICON PNP 2SA1283 |
Isahaya Electronics Corporation |
| 7132 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 7133 |
2SA1285 |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 7134 |
2SA1285A |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 7135 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 7136 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 7137 |
2SA1307 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 7138 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 7139 |
2SA1364 |
SILICON PNP TRANSISTOR |
Isahaya Electronics Corporation |
| 7140 |
2SA1365 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
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