| No. |
Part Name |
Description |
Manufacturer |
| 721 |
IS61SF12832-8TQI |
8ns; 3.3V; 128K x 32, 128 x 36 synchronous flow-through static RAM |
ICSI |
| 722 |
IS61SF12836-10B |
10ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 723 |
IS61SF12836-10BI |
10ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 724 |
IS61SF12836-10TQ |
10ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 725 |
IS61SF12836-10TQI |
10ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 726 |
IS61SF12836-12B |
12ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 727 |
IS61SF12836-12BI |
12ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 728 |
IS61SF12836-12TQ |
12ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 729 |
IS61SF12836-12TQI |
12ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 730 |
IS61SF12836-7.5B |
7.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 731 |
IS61SF12836-7.5TQ |
7.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 732 |
IS61SF12836-8.5B |
8.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 733 |
IS61SF12836-8.5BI |
8.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 734 |
IS61SF12836-8.5TQ |
8.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 735 |
IS61SF12836-8.5TQI |
8.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 736 |
IS61SF12836-8B |
8ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 737 |
IS61SF12836-8BI |
8ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 738 |
IS61SF12836-8TQ |
8ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 739 |
IS61SF12836-8TQI |
8ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
| 740 |
K6T1008C2C-B |
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 741 |
K6T1008C2C-DB55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 742 |
K6T1008C2C-DB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 743 |
K6T1008C2C-DL55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 744 |
K6T1008C2C-DL70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 745 |
K6T1008C2C-F |
70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 746 |
K6T1008C2C-GB55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 747 |
K6T1008C2C-GB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 748 |
K6T1008C2C-GL55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 749 |
K6T1008C2C-GL70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
| 750 |
K6T1008C2C-L |
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
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