No. |
Part Name |
Description |
Manufacturer |
721 |
IS61SF12832-8TQI |
8ns; 3.3V; 128K x 32, 128 x 36 synchronous flow-through static RAM |
ICSI |
722 |
IS61SF12836-10B |
10ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
723 |
IS61SF12836-10BI |
10ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
724 |
IS61SF12836-10TQ |
10ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
725 |
IS61SF12836-10TQI |
10ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
726 |
IS61SF12836-12B |
12ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
727 |
IS61SF12836-12BI |
12ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
728 |
IS61SF12836-12TQ |
12ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
729 |
IS61SF12836-12TQI |
12ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
730 |
IS61SF12836-7.5B |
7.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
731 |
IS61SF12836-7.5TQ |
7.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
732 |
IS61SF12836-8.5B |
8.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
733 |
IS61SF12836-8.5BI |
8.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
734 |
IS61SF12836-8.5TQ |
8.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
735 |
IS61SF12836-8.5TQI |
8.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
736 |
IS61SF12836-8B |
8ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
737 |
IS61SF12836-8BI |
8ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
738 |
IS61SF12836-8TQ |
8ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
739 |
IS61SF12836-8TQI |
8ns; 3.3V; 128 x 36 synchronous flow-through static RAM |
ICSI |
740 |
K6T1008C2C-B |
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
741 |
K6T1008C2C-DB55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
742 |
K6T1008C2C-DB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
743 |
K6T1008C2C-DL55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
744 |
K6T1008C2C-DL70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
745 |
K6T1008C2C-F |
70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
746 |
K6T1008C2C-GB55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
747 |
K6T1008C2C-GB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
748 |
K6T1008C2C-GL55 |
55ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
749 |
K6T1008C2C-GL70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
750 |
K6T1008C2C-L |
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
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