| No. |
Part Name |
Description |
Manufacturer |
| 721 |
PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz |
Infineon |
| 722 |
PTF211301 |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
| 723 |
PTF211301A |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
| 724 |
PVA33 |
Photovoltaic Relay Microelectronic Power IC Relay Single-Pole/ 130mA/ 0-300V AC/DC |
International Rectifier |
| 725 |
QPA0163L |
100 - 1300 MHz Cascadable SiGe HBT Amplifier |
Qorvo |
| 726 |
R15KP130 |
Diode TVS Single Uni-Dir 130V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 727 |
R15KP130A |
Diode TVS Single Uni-Dir 130V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 728 |
R15KP130C |
Diode TVS Single Bi-Dir 130V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 729 |
R15KP130CA |
Diode TVS Single Bi-Dir 130V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 730 |
R15KP13A |
Diode TVS Single Uni-Dir 130V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 731 |
R15KP13C |
Diode TVS Single Uni-Dir 130V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 732 |
R15KP13CA |
Diode TVS Single Uni-Dir 130V 15KW 2-Pin Case 5R |
New Jersey Semiconductor |
| 733 |
RD130EB |
0.5W DHD zener diode, 130V |
NEC |
| 734 |
RE027 |
A Low Drop Out (LDO) voltage regulator macrocell with a fixed 2.8V output voltage, rated for loads of up to 130 mA. A typical application is radio section supply in mobile terminals. |
Atmel |
| 735 |
SA130C |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 130.00 V. Test current IT = 1 mA. |
Bytes |
| 736 |
SA130CA |
500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 130.00 V. Test current IT = 1 mA. |
Bytes |
| 737 |
SCDUPLEX,IR,1X9,3,3V |
Transceivers by Form-factor MSA - ATM/SONET/SDH, 1300 nm, 622 Mbit/s, 15 km, 1x9, SC Duplex Connector, 3.3 V, DC/DC coupling |
Infineon |
| 738 |
SCDUPLEX,IR,1X9,3.3V,-40 |
Transceivers by Form-factor MSA - ATM/SONET/SDH, 1300 nm, 622 Mbit/s, 15 km, 1x9, DC/DC coupling, Ext. Temp. Range, SC, 3.3 V |
Infineon |
| 739 |
SD1062 |
RF NPN Transistor 130...230MHZ FM mobile applications |
SGS Thomson Microelectronics |
| 740 |
SD1072 |
RF NPN Transistor 130...230MHZ FM mobile applications |
SGS Thomson Microelectronics |
| 741 |
SDA2526-2 |
V(dd): -0.3 to +6V; V(input): -0.3 to +6V; 130mW; nonvolatile memory 2-Kbit E2PROM with I2C bus and 1K write protection |
Infineon |
| 742 |
SDA3526-1 |
V(dd): -0.3 to +6V; V(input): -0.3 to +6V; 130mW; nonvolatile memory 2-Kbit E2PROM with I2C bus and 1K write protection |
Infineon |
| 743 |
SF150R11 |
Silicon alloy-diffused junction thyristor 150A 1300V |
TOSHIBA |
| 744 |
SF300R11 |
Silicon alloy-diffused junction thyristor 300A 1300V |
TOSHIBA |
| 745 |
SF30R11 |
Silicon diffused junction thyristor 30A 1300V |
TOSHIBA |
| 746 |
SF50R12 |
Silicon alloy-diffused junction thyristor 50A 1300V |
TOSHIBA |
| 747 |
SF80R11 |
Silicon alloy-diffused junction thyristor 80A 1300V |
TOSHIBA |
| 748 |
SFF,2X10,LC,TTL,IR |
Transceivers by Form-factor MSA - ATM/SDH/SONET, 1300 nm, 2.5 Gbit/s, 15 km, 2x10, LC Connector, with collar, AC-AC-Coupling |
Infineon |
| 749 |
SFF,2X5/2X10,LC |
Transceivers by Standard - ATM/SDH/SONET, 1300 nm, 2.5 Gbit/s, 2 km, 2x5/2x10, LC Connector |
Infineon |
| 750 |
SFFSM,2X5,LC,PECL |
Transceivers by Standard - 1300 nm 622 MBd, 2x5, LC connector, with collar, DC/DC coupling, 21/ 15 km |
Infineon |
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