No. |
Part Name |
Description |
Manufacturer |
721 |
BD138-6 |
12.500W Switching PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD137-6 |
Continental Device India Limited |
722 |
BD140A |
2A Complementary silicon plastic 30W power PNP transistor 60V |
Motorola |
723 |
BD167 |
20.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD168 |
Continental Device India Limited |
724 |
BD168 |
20.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD167 |
Continental Device India Limited |
725 |
BD16922EFV-M |
Automotive 2ch 60V Max, H-bridge Drivers |
ROHM |
726 |
BD16922EFV-ME2 |
Automotive 2ch 60V Max, H-bridge Drivers |
ROHM |
727 |
BD177 |
30.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 hFE. |
Continental Device India Limited |
728 |
BD177-10 |
30.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
729 |
BD177-6 |
30.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
730 |
BD178 |
30.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 hFE. |
Continental Device India Limited |
731 |
BD178-10 |
30.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 63 - 160 hFE. |
Continental Device India Limited |
732 |
BD178-6 |
30.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 40 - 100 hFE. |
Continental Device India Limited |
733 |
BD201 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 60W. |
General Electric Solid State |
734 |
BD203 |
60.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Complementary BD204 |
Continental Device India Limited |
735 |
BD204 |
60.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Complementary BD203 |
Continental Device India Limited |
736 |
BD235 |
25.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
737 |
BD235 |
Trans GP BJT NPN 60V 2A 3-Pin(3+Tab) SOT-32 Tube |
New Jersey Semiconductor |
738 |
BD236 |
25.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
739 |
BD236 |
Trans GP BJT PNP 60V 2A 3-Pin(3+Tab) SOT-32 |
New Jersey Semiconductor |
740 |
BD239A |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
741 |
BD239A |
2A Complementary silicon plastic 30W power NPN transistor 60V |
Motorola |
742 |
BD240A |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
743 |
BD241A |
Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220 Tube |
New Jersey Semiconductor |
744 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
745 |
BD242A |
Trans GP BJT PNP 60V 3A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
746 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
747 |
BD243A |
65.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 6.000A Ic, 30 hFE. |
Continental Device India Limited |
748 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
749 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
750 |
BD244A |
65.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 6.000A Ic, 30 hFE. |
Continental Device India Limited |
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