No. |
Part Name |
Description |
Manufacturer |
721 |
NMC27C1024Q120 |
120 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
722 |
NMC27C1024Q15 |
150 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
723 |
NMC27C1024Q150 |
150 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
724 |
NMC27C1024Q17 |
170 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
725 |
NMC27C1024Q170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
726 |
NMC27C1024Q20 |
200 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
727 |
NMC27C1024Q200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
728 |
NMC27C1024Q25 |
250 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
729 |
NMC27C1024Q250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
730 |
NMC27C1024QE150 |
150 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
731 |
NMC27C1024QE170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
732 |
NMC27C1024QE200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
733 |
NMC27C1024QM170 |
170 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
734 |
NMC27C1024QM200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
735 |
NMC27C1024V |
1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
736 |
T161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
737 |
TC511402AJ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
738 |
TC511402AP-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
739 |
TC511402ASJ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
740 |
TC511402AZ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
741 |
TC514400AAZ-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
742 |
TC514400AAZL-60 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
743 |
TC51440JL-10 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
744 |
TC51440JL-80 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
745 |
TC51440ZL-10 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
746 |
TC51440ZL-80 |
1,048,576 x 4 BIT DYNAMIC RAM |
TOSHIBA |
747 |
TC551402J |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM |
TOSHIBA |
748 |
TC551402J-22 |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM |
TOSHIBA |
749 |
TC551402J-25 |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM |
TOSHIBA |
750 |
TC55V1403FT-15 |
4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM |
TOSHIBA |
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