| No. |
Part Name |
Description |
Manufacturer |
| 721 |
K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 722 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 723 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 724 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 725 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 726 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 727 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 728 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 729 |
K4E171612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 730 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 731 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 732 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 733 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 734 |
K4F171611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 735 |
K4F171611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 736 |
K4F171612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 737 |
K4F171612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 738 |
K6F1016U4C-EF55 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 739 |
K6F1016U4C-EF70 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 740 |
K6F1616R6M FAMILY |
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet |
Samsung Electronic |
| 741 |
K6F1616T6B |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 742 |
K6F1616T6B-EF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 743 |
K6F1616T6B-EF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 744 |
K6F1616T6B-F |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 745 |
K6F1616T6B-TF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 746 |
K6F1616T6B-TF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 747 |
K6F1616T6C |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 748 |
K6F1616T6C-F |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 749 |
K6F1616T6C-FF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 750 |
K6F1616T6C-FF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
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