| No. |
Part Name |
Description |
Manufacturer |
| 721 |
BF998 |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 722 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 723 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
| 724 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
| 725 |
BFG193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 726 |
BFG196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 727 |
BFG19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 728 |
BFG235 |
RF-Bipolar - For low-distortion broadband output amplifier stages in wireless systems up to 2 GHz |
Infineon |
| 729 |
BFP 181R |
RF-Bipolar NPN Type Transistors with transition frequency of 8 GHz |
Infineon |
| 730 |
BFP136W |
RF-Bipolar - For power amplifier in DECT and PCN systems |
Infineon |
| 731 |
BFP181 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
| 732 |
BFP181R |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
| 733 |
BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
| 734 |
BFP182R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
| 735 |
BFP182W |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
| 736 |
BFP183 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA |
Infineon |
| 737 |
BFP183R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA |
Infineon |
| 738 |
BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA |
Infineon |
| 739 |
BFP193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 740 |
BFP193W |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 741 |
BFP196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 742 |
BFP196W |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 743 |
BFP360W |
RF-Bipolar - NPN Silicon RF transistor in 4pin SOT343 package ideal for Oscillators and VCOs up to 4GHz |
Infineon |
| 744 |
BFP405 |
RF-Bipolar - NPN Silicon RF transistor for low current applications |
Infineon |
| 745 |
BFP405F |
RF-Bipolar - NPN Silicon RF transistor for low current applications in NEW thin small flatlead package TSFP-4 |
Infineon |
| 746 |
BFP420 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers |
Infineon |
| 747 |
BFP420F |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers in NEW thin small flatlead package TSFP-4 |
Infineon |
| 748 |
BFP450 |
RF-Bipolar - NPN Silicon RF transistor for medium power amplifiers |
Infineon |
| 749 |
BFP520 |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers |
Infineon |
| 750 |
BFP520F |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers in NEW thin small flatlead package TSFP-4 |
Infineon |
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