No. |
Part Name |
Description |
Manufacturer |
721 |
V9MLA0805LWH |
Surface mount varistor. Ag/Pd. Max continuous working voltage: 9VDC, 6.5VAC. 7in diameter reel. |
Littelfuse |
722 |
V9MLA0805LWT |
Surface mount varistor. Ag/Pd. Max continuous working voltage: 9VDC, 6.5VAC. 13in diameter reel. |
Littelfuse |
723 |
V9MLN41206WH |
Surface mount varistor. SurgeArray suppressor. Ag/Pd/Pt. Max continuous working voltage: 9VDC. 7 in diameter reel. |
Littelfuse |
724 |
V9MLN41206WT |
Surface mount varistor. SurgeArray suppressor. Ag/Pd/Pt. Max continuous working voltage: 9VDC. 13 in diameter reel. |
Littelfuse |
725 |
VQA10 |
Light emitting diode diameter 5mm TSN red, possibly equivalent LS5160 |
RFT |
726 |
VQA13 |
Light emitting diode diameter 5mm red, possibly equivalent TRL116A |
RFT |
727 |
VQA13-1 |
Light emitting diode diameter 5mm red, possibly equivalent LR5160 |
RFT |
728 |
VQA16 |
Light emitting diode diameter 5mm TSN red, possibly equivalent CQX54 |
RFT |
729 |
VQA17 |
Light emitting diode diameter 3mm TSN red, possibly equivalent (TLR123) |
RFT |
730 |
VQA23 |
Light emitting diode diameter 5mm green, possibly equivalent LG5160 |
RFT |
731 |
VQA26 |
Light emitting diode diameter 5mm green, possibly equivalent CQX64 |
RFT |
732 |
VQA27 |
Light emitting diode diameter 3mm green, possibly equivalent TLG123 |
RFT |
733 |
VQA33 |
Light emitting diode diameter 5mm yellow, possibly equivalent LY5160 |
RFT |
734 |
VQA36 |
Light emitting diode diameter 5mm yellow, possibly equivalent CQX74 |
RFT |
735 |
VQA37 |
Light emitting diode diameter 3mm yellow, possibly equivalent TLY123 |
RFT |
736 |
VQA46 |
Light emitting diode diameter 5mm orange, possibly equivalent (TLO153) |
RFT |
737 |
VQA47 |
Light emitting diode diameter 3mm orange, possibly equivalent TLO123 |
RFT |
738 |
VQA60 |
Light emitting diode diameter 5mm TSN red/green, possibly equivalent LU5350GL |
RFT |
739 |
VQA70 |
Light emitting diode diameter 5mm TSN red/yellow |
RFT |
740 |
VQA80 |
Light emitting diode diameter 5mm yellow-green |
RFT |
741 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
742 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
743 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
744 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
745 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
746 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
747 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
748 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
749 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
750 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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