| No. |
Part Name |
Description |
Manufacturer |
| 721 |
K4E661612C-T50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 722 |
K4E661612C-T60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 723 |
K4E661612C-TC |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 724 |
K4E661612C-TC45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 725 |
K4E661612C-TC50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 726 |
K4E661612C-TC60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 727 |
K4E661612C-TL45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 728 |
K4E661612C-TL50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 729 |
K4E661612C-TL60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 730 |
K4E661612D |
CMOS DRAM |
Samsung Electronic |
| 731 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 732 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 733 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 734 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 735 |
K4F151611 |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 736 |
K4F151611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 737 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 738 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 739 |
K4F151612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 740 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 741 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 742 |
K4F16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 743 |
K4F160411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 744 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 745 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 746 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 747 |
K4F160411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 748 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 749 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 750 |
K4F160412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
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