| No. |
Part Name |
Description |
Manufacturer |
| 721 |
81CNQ040A |
40V 80A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 722 |
81CNQ040ASL |
40V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
| 723 |
81CNQ040ASM |
40V 80A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 724 |
81CNQ045 |
45V 80A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 725 |
81CNQ045A |
45V 80A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 726 |
81CNQ045ASL |
45V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
| 727 |
81CNQ045ASM |
45V 80A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 728 |
81CNQ045SL |
45V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
| 729 |
81CNQ045SM |
45V 80A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 730 |
82022-20 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 731 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 732 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 733 |
82223-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 734 |
82223-4 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 735 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 736 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 737 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 738 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 739 |
82CNQ030 |
30V 80A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 740 |
82CNQ030A |
30V 80A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 741 |
82CNQ030ASL |
30V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
| 742 |
82CNQ030ASM |
30V 80A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 743 |
82CNQ030SL |
30V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
| 744 |
82CNQ030SM |
30V 80A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 745 |
83CNQ080 |
80V 80A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 746 |
83CNQ080A |
80V 80A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 747 |
83CNQ080ASL |
80V 80A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
| 748 |
83CNQ080ASM |
80V 80A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 749 |
83CNQ100 |
100V 80A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 750 |
83CNQ100A |
100V 80A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
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