| No. |
Part Name |
Description |
Manufacturer |
| 721 |
BAT10 |
Microwave mixer/detector diode |
Philips |
| 722 |
BAV46 |
Detector diode |
mble |
| 723 |
BAV75 |
Microwave detector diode |
Philips |
| 724 |
BAV97 |
Detector diode |
mble |
| 725 |
BAV97 |
Microwave detector diode |
Philips |
| 726 |
BAY66 |
Silicon power varactor diode for frequency multipliers up to 1 GHz |
VALVO |
| 727 |
BAY96 |
Varactor diode |
mble |
| 728 |
BAY96 |
Silicon Multiplier varactor diode |
Philips |
| 729 |
BAY96 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to approx. 500 MHz |
VALVO |
| 730 |
BBY31 |
Hyperabrupt varactor diode-Not recommended for new designs |
Zetex Semiconductors |
| 731 |
BBY40 |
Hyperabrupt varactor diode-Not recommended for new designs |
Zetex Semiconductors |
| 732 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 733 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 734 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 735 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 736 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 737 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 738 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 739 |
BC328 |
Transistor. Switch. and amp. applications. Suitable for AF-driver and power output stages. Vces = -30V, Vceo = -25V, Vebo = -5V. Collector dissipation Pc(max) = 625mW. Ic = -800mA. |
USHA India LTD |
| 740 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
| 741 |
BXY27 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band and input powers up to 10W |
Mullard |
| 742 |
BXY27 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to S-band |
VALVO |
| 743 |
BXY28 |
Silicon planar epitaxial varactor diode for use in high C efficiency multipliers in the 2-4 GHz range |
Mullard |
| 744 |
BXY28 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to C-band |
VALVO |
| 745 |
BXY29 |
Silicon planar epitaxial varactor diode for use in frequency multiplier circuits in the 4-8GHz range |
Mullard |
| 746 |
BXY29 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to the X-band |
VALVO |
| 747 |
BXY32 |
Silicon planar epitaxial varactor diode for frequency multipliers up to the X-band |
VALVO |
| 748 |
BXY35 |
Silicon planar epitaxial varactor diode for frequency multipliers up to 18GHz |
Mullard |
| 749 |
BXY36 |
Silicon planar epitaxial varactor diode for frequency multipliers up to 18GHz |
Mullard |
| 750 |
BXY37 |
Silicon planar epitaxial varactor diode for frequency multipliers up to 18GHz |
Mullard |
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