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Datasheets for D EF

Datasheets found :: 2645
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No. Part Name Description Manufacturer
721 6060R N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology
722 60N035 N-Channel Field Effect Transistor BayLinear
723 60N035S 30V 52A N-channel field effect transistor BayLinear
724 60N035T 30V 52A N-channel field effect transistor BayLinear
725 612-Z MOS Field Effect Power Transistors Unknow
726 8090 LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz Infineon
727 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
728 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
729 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
730 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
731 82324-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
732 82327-10 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
733 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
734 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
735 82327-6 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
736 9410A N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology
737 9410A Single N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor
738 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
739 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
740 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
741 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
742 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
743 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
744 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
745 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
746 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
747 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
748 AN-211A Application note - Field effect transistors in theory and practice Motorola
749 AO3402 N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductor
750 AO3402L N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductor


Datasheets found :: 2645
Page: | 21 | 22 | 23 | 24 | 25 | 26 | 27 | 28 | 29 |



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