| No. |
Part Name |
Description |
Manufacturer |
| 721 |
2SD2010 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 722 |
2SD2011 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 723 |
2SD2069 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 724 |
2SD2146 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 725 |
2SD2159 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 726 |
2SD2182 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 727 |
2SD2306 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 728 |
2SD2309 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 729 |
2SD2388 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 730 |
2SD2450 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 731 |
2SD2451 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 732 |
2SD2452 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 733 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 734 |
2SD77AH |
Germanium NPN Alloyed Junction Transistor, intended for use in Low Speed Switching and Audio Frequency Power Output |
Hitachi Semiconductor |
| 735 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 736 |
2SD96 |
Germanium NPN Alloyed Junction Transistor, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 737 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 738 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 739 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 740 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 741 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 742 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 743 |
3554 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 744 |
35PD10M |
The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... |
Anadigics Inc |
| 745 |
35PD1M-TO |
The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... |
Anadigics Inc |
| 746 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 747 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 748 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 749 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 750 |
3SK21H |
Silicon N-Channel MOS Type FET Transistor, intended for use in Chopper |
Hitachi Semiconductor |
| | | |
