| No. |
Part Name |
Description |
Manufacturer |
| 721 |
300WD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 722 |
300WD11A |
General-Purpose Silicon Rectifiers 400A |
TOSHIBA |
| 723 |
300YD11 |
General-Purpose Silicon Rectifiers 350A |
TOSHIBA |
| 724 |
30L6P45 |
RECTIFIER MODULE SILICON DIFFUSED TYPE ( THREE PHASE FULL WAVE BRIDGE APPLICATIONS) |
TOSHIBA |
| 725 |
30Q6P45 |
RECTIFIER MODULE SILICON DIFFUSED TYPE ( THREE PHASE FULL WAVE BRIDGE APPLICATIONS) |
TOSHIBA |
| 726 |
3CC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 727 |
3CD12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 728 |
3DC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 729 |
3DD12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 730 |
3FC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 731 |
3FD12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 732 |
3GC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 733 |
3GD12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 734 |
3HC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 735 |
3HD12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 736 |
3JC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 737 |
3JD12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 738 |
3KC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 739 |
3KD12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 740 |
3LC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 741 |
3LD12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 742 |
3MC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 743 |
3MD12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 744 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
| 745 |
3NC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 746 |
3ND12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 747 |
4000 |
Common base silicon NPN microwave power transistor featuring a unique Microgrid™ structure |
SGS Thomson Microelectronics |
| 748 |
4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 749 |
4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 750 |
40525 |
2.5A 100V Sensitive-Gate Silicon Triacs |
RCA Solid State |
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