No. |
Part Name |
Description |
Manufacturer |
721 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
722 |
2N6451 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
723 |
2N6451 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
724 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
725 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
726 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
727 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
728 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
729 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
730 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
731 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
732 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
733 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
734 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
735 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
736 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
737 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
738 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
739 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
740 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
741 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
742 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
743 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
744 |
2N7000 |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
745 |
2N7000 |
N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
746 |
2N7000 |
N-channel enhancement mode field-effect transistor |
Philips |
747 |
2N7000_D26Z |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
748 |
2N7002 |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
749 |
2N7002 |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
750 |
2N7002 |
N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
| | | |