| No. |
Part Name |
Description |
Manufacturer |
| 721 |
2N6730 |
0.850W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
| 722 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
| 723 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 724 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 725 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 726 |
2N718A |
0.500W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 727 |
2N720A |
0.500W Switching NPN Metal Can Transistor. 80V Vceo, A Ic, 20 hFE. |
Continental Device India Limited |
| 728 |
2N7373 |
Complimentary Power Transistors in Hermetic Isolated TO-254AA Packages |
Microsemi |
| 729 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 730 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 731 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 732 |
2N930 |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. |
Continental Device India Limited |
| 733 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
| 734 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 735 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 736 |
2SA1037P |
Complementary Dual General Purpose Amplifier Transistor |
ON Semiconductor |
| 737 |
2SA1037P |
Complementary Dual General Purpose Amplifier Transistor |
ON Semiconductor |
| 738 |
2SA1225 |
Silicon PNP epitaxial power transistor, complementary 2SC2983 |
TOSHIBA |
| 739 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 740 |
2SA1302 |
Silicon PNP triple diffused power transistor, complementary 2SC3281 |
TOSHIBA |
| 741 |
2SA1306B |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Motorola |
| 742 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 743 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 744 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 745 |
2SA1747 |
Transistor - Silicon PNP Epitaxial Planar Type - Complementary pair with 2SC4561 |
Panasonic |
| 746 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 747 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 748 |
2SA493 |
SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS)(TENTATIVE) |
Unknow |
| 749 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
| 750 |
2SA509 |
Silicon PNP epitaxial planar medium power transistor, complementary to 2SC509 |
TOSHIBA |
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