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Datasheets for FECT

Datasheets found :: 6362
Page: | 21 | 22 | 23 | 24 | 25 | 26 | 27 | 28 | 29 |
No. Part Name Description Manufacturer
721 2N6450 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
722 2N6451 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
723 2N6451 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
724 2N6452 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
725 2N6452 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
726 2N6453 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
727 2N6453 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
728 2N6454 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
729 2N6454 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
730 2N6550 N-Channel silicon junction field-effect transistor InterFET Corporation
731 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
732 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
733 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
734 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
735 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
736 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
737 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
738 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
739 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
740 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
741 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
742 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
743 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
744 2N7000 N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor
745 2N7000 N-Channel Enhancement Mode Field Effect Transistor National Semiconductor
746 2N7000 N-channel enhancement mode field-effect transistor Philips
747 2N7000_D26Z N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor
748 2N7002 N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology
749 2N7002 N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor
750 2N7002 N-Channel Enhancement Mode Field Effect Transistor National Semiconductor


Datasheets found :: 6362
Page: | 21 | 22 | 23 | 24 | 25 | 26 | 27 | 28 | 29 |



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